姓名：周振宇    性别： 男  职称： 讲师

职务：  学历： 博士  电子邮件： zhou_zhenyu@hbu.edu.cn

通讯地址： 河北省保定市莲池区七一东路2666号

光电忆阻器;

                  类脑神经器件与系统;

1. 河北大学,用于模拟视网膜功能的光电忆阻器特性研究，项目编号:521100221071，2021.10.31-2024.10.31，总经费 50万。

1. Zhou, Z.; Zhao, J.; Chen, A. P.; Pei, Y.; Xiao, Z.; Wang, G.; Chen J.; Fu G.; Yan, X. *; Designing carbon conductive filament memristor devices for memory and electronic synapse applications. Mater. Horiz., 2020,7(4), 1106-1114. (1区)

2. Zhou, Z.; Yan, X. *; Zhao, J.; Lu, C.; Ren, D.; Lu, N.; Wang, J.; Zhang, L.; Li, X.; Wang, H.; Zhao, M.; Synapse behavior characterization and physical mechanism of a TiN/SiO_x/p-Si tunneling memristor device. J. Mater. Chem. C, 2019,7(6), 1561-1567. (1区)

3. Zhou, Z.; Pei, Y.; Zhao, J.; Fu, G. *; Yan, X. *;  Visible light responsive optoelectronic memristor device based on CeOx/ZnO structure for artificial vision system. Appl. Phys. Lett., 2021,118(19), 191103.(2区top)

4. Yan, X. #*(硕导); Zhou, Z. #; Zhao, J.; Liu, Q.; Wang, H.; Yuan, G.; Chen, J.; Flexible memristors as electronic synapses for neuro-inspired computation based on scotch tape-exfoliated mica substrates. Nano Res., 2018,11(3), 1183-1192. (1区)

5. Yan, X. #*; Zhou, Z. #; Ding, B.; Zhao, J.; Zhang, Y.; Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO₂/p-Si tunneling junction structure. J. Mater. Chem. C, 2017,5(9), 2259-2267. (1区)

1）闫小兵，周振宇，赵建辉，张园园；一种基于二氧化硅隧道结的阻变存储器及其制备方法，专利号：ZL201610388193.1

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